Abstract
The effect of Co20Fe60B20 insertion on tunnel magnetoresistance (TMR) properties of MgO barrier magnetic tunnel junctions (MTJs) was studied with Co90Fe10/Pd multilayer electrodes showing perpendicular anisotropy. The TMR ratio, which depended on the sputtering power density of the CoFeB layer, reached 43% at 1.77 W/cm2 in MTJs with a 1.8-nm-thick CoFeB layer inserted on both sides of the MgO barrier. With increasing CoFeB layer thickness, the optimal annealing temperature (Ta) realizing the maximum TMR ratio increased along with the TMR ratio. The MTJs with 3.0-nm-thick CoFeB deposited at 1.77 W/cm2 showed a TMR ratio of 91% at Ta = 250 °C, where the perpendicular magnetic anisotropy is maintained.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
