Cofabrication of superconducting YBa2Cu3O7−δ and semiconducting devices on (100) Si substrates

Abstract

We report the process technology for the modular integration of YBa2Cu3O7−δ (YBCO) and p-type metal-oxide-semiconductor (p-MOS) devices on the same silicon substrate. Basic test structures consisting of single p-MOS field-effect transistors with a Pt-based metallization and YBCO bridges were fabricated. After completion of the p-MOS fabrication, highly c-axis-oriented YBCO films showing a critical temperature of 86 K were grown on a free silicon surface. The electrical characteristics at 77 K of the p-MOS transistors were comparable to those of this technology with Al metallization. This means that no fatal degradation was introduced into the p-MOS process by the YBCO one. The cofabrication on the same silicon substrate of devices using such disparate technologies as YBCO and MOS is a very promising starting point for a new generation of monolithic integrated circuits combining the advantages of oxide and semiconductor properties.