Abstract
In Ga2Te3-rich quasibinary Cd(3−3m)Ga2mTe3 (m=0.75–0.98) system there are two physical phenomena: structural vacancy (V) and its related cationic interdiffusion. The former is able to simultaneously govern the carrier, phonon transportations and the bandgap, while the latter merely facilitates the transportation of carrier to some extent. Accordingly, there are multiple transportation behaviors coexisting at a certain m value in this system. These behaviors, which have not only enhanced the carrier concentration (n), but have also increased the entropy of the lattice as m value increases, yield the highest thermoelectric figure of merit (ZT) of 0.55 at 682K for m=0.98.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
