Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi12FeO20 Ideal Sillenite

Abstract

Resistive Random-Access Memory Devices Neuromorphic devices are essential for beyond von-Neumann computing and Resistive Random Access Memories (RRAMs) are the backbone for it. In article number 2200744, Chandra Prakash and colleagues show RRAM characteristics in a Bi12FeO20 system for the first time, together with negative differential resistance (NDR) and write once and read many (WORM) like characteristics simultaneously. It is hoped this could lead to the potential of neuromorphic computing and low-power memory devices.