Abstract
Abstract The coexistence of bipolar and unipolar resistive switching (BRS and URS) modes are observed in the vanadium doped ZnO polycrystalline thin films fabricated by a sol–gel method. These two switching modes can be activated separately depending on the different compliance current ( I cc ) during the first voltage sweeping process: the fabricated device shows reproducible BRS behavior with a low compliance current I cc = 0.1 mA, while with a high I cc = 0.01 A, URS behavior was observed after electroforming. The conversion between BRS and URS is reversible. The conducting filament formation/rupture models with electrochemical redox reactions and thermal effects were suggested to explain the BRS and URS behaviors respectively.
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