Abstract

We report a study of structural and electronic properties of a germanium layer on Al(111) using scanning tunneling microscopy (STM), low energy electron diffraction and core-level photoelectron spectroscopy. Experimental results show that a germanium layer can be formed at a relatively high substrate temperature showing either (3×3) or (√7×√7)R±19.1° reconstructions. First-principles calculations based on density functional theory suggest an atomic model consisting of a strongly buckled (2×2) germanene layer, which is stable in two different orientations on Al(111). Simulated STM of both orientations fit nicely with experimental STM images and the Ge 3d core-level data decomposed into four components is consistent with the suggested model.

Highlights

  • The properties of two-dimensional (2D) materials are currently subjected to intense experimental and theoretical studies

  • Deposition of one monolayer (ML) of Ge on Au(111) at ≈200 °C resulted in low energy electron diffraction (LEED) data showing some superstructure spots interpreted as diffraction from (√19×√19), (√7×√7) and (5×5) germanene phases [10]

  • Our LEED and scanning tunneling microscopy (STM) results confirm a coexistence of two wellordered hexagonal structures with (3×3) and (√7×√7) periodicities with respect to Al (1×1)

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Summary

Introduction

The properties of two-dimensional (2D) materials are currently subjected to intense experimental and theoretical studies. A model based on a distorted, buckled, germanene sheet was suggested and reported to be consistent with scanning tunneling microscopy (STM) data assuming that only 3 out of 18 Ge atoms inside the (√19×√19) unit cell were observed.

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Conclusion

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