Abstract
For Entangled electron pairs superconducting spintronics, there exist two drawbacks in existing proposals of generating entangled electron pairs. One is that the two kinds of different spin entangled electron pairs mix with each other. And the other is a low efficiency of entanglement production. Herein, we report the spin entanglement state of the ferromagnetic insulator (FI)/s-wave superconductor/FI structure on a narrow quantum spin Hall insulator strip. It is shown that not only the high production of entangled electron pairs in wider energy range, but also the perfect spin filtering of entangled electron pairs in the context of no highly spin-polarized electrons, can be obtained. Moreover, the currents for the left and right leads in the antiferromagnetic alignment both can be zero, indicating 100% tunnelling magnetoresistance with highly magnetic storage efficiency. Therefore, the spin filtering for entangled electron pairs and magnetic storage with high efficiencies coexist in one setup. The results may be experimentally demonstrated by measuring the tunnelling conductance and the noise power.
Highlights
(NM)/SC/NM junction on a QSH strip was investigated[15]
We propose a topological ferromagnet insulator (FI)/s-wave SC/FI hybrid structure based on a narrow QSH strip, in which the interplay of the ferromagnetism and interedge coupling is exhibited
In the case of h0 = 0, the complex ferromagnetic (CF) edges turn to normal ones and the results for the F and AF alignments, as shown by the solid lines in Fig. 2, are thoroughly identical, which is just that in ref
Summary
The middle region, the wave functions of electrons in the QSH strip can penetrate into the bulk SC26, inducing the lower interedge coupling strength α2. The exchange field in the two edges are caused by the proximity of the FIs, which perhaps gives to the spin-flip scattering but it is very weak and cannot be considered. The spin-flip scattering induced by the coupling in the two edges is very weak and can be ignored as in ref. The positive (negative) sign is for spin-up (down) electrons in edge 1(2), the potential U(x) in the three different areas can be tuned by the gate voltage or doping independently, and h1(2)(r) denotes the exchange field.
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