Abstract
Natural biomaterials have attracted great interest for the fabrication of biocompatible memristors. Here, dense and smooth milk films were deposited on the Pt/SiO2/Si substrate by spin-coating method and resistive switching (RS) devices based milk films with the configuration of Ag/milk/Pt/SiO2/Si are fabricated for the first time. Furthermore, memory RS (MRS) and threshold RS (TRS) effects coexist in the devices, which can be controlled by appropriately setting the compliance current (I cc). The current conduction mechanisms of the devices with MRS and TRS effects are controlled by typical trap-controlled space charge limited current (SCLC) conduction and filamentary conduction mechanism. The good RS performances of the milk-based devices make them promising for sustainable bioelectronics and novel logic device applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
