Abstract
We report studies of energy structure of InAs self-assembled quantum dots (QDs) embedded in AlAs matrix by stationary and transient photoluminescence and calculations. Calculation reveals that the QDs have band alignment structure of type I. Photoluminescence demonstrates low-energy and high-energy bands with drastically different decay time related to carries recombination in QDs of different sizes. The experimental results evidence a direct-indirect transition of the QD conduction band structure with decreasing their size.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
