Abstract
Our Hall bar shape device based on Bi2Se3 nano-plate was fabricated and studied at a dilution temperature with a tilted magnetic field up to 45 Tesla. It is found that, three types of carriers, one of three-dimensional (3D) and two of two-dimensional (2D), were identified by analyzing the angular dependence of Shubnikov-de Haas (SdH) oscillations, which confirmed the coexistence of bulk carriers and band bending induced two-dimensional electron gas in our transport experiment. The co-contributions to quantum oscillations indicated the independence of these states, without smearing out by scattering between each other, which may lay the foundations for detecting topological surface states (TSS) with residual bulk carriers in Bi2Se3.
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