Abstract
A Cu/TaOx/Pt device can be switched between high resistive state and low resistive state based on the formation and rupture of two types of nanofilament: Cu and oxygen vacancy conductive bridges. The Cu nanobridge and oxygen vacancy filament form when high positive and negative forming voltages are applied to the Cu electrode, respectively. The set voltage of oxygen vacancy filament is higher and of opposite polarity than that of Cu filament. Both positive and negative voltages can reset the device by Joules heating. Therefore the device can switch in bipolar and unipolar modes with either conductive filament in separate windows of operation.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
