Abstract
The dielectric response of K0,26(NH4)0.74H2PO4–SiO2 composite prepared by embedding of corresponded salts into porous SiO2 glass with 320 nm average pore diameter has been studied at the temperature range of 10–300 K. The transition from paraelectric to antiferroelectric (AFE) phase in implanted particles is detected at TN ≈ 45 K. Below ≈ 20 K the specific dispersion of dielectric response indicates a transition into proton glass (PG) state. It was found that the average time of dielectric relaxation follows the empirical Vogel—Fulcher law. Obtained results speak in favor of the coexistence of AFE and PG phases at low temperatures.
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