Abstract

The dielectric response of K0,26(NH4)0.74H2PO4–SiO2 composite prepared by embedding of corresponded salts into porous SiO2 glass with 320 nm average pore diameter has been studied at the temperature range of 10–300 K. The transition from paraelectric to antiferroelectric (AFE) phase in implanted particles is detected at TN ≈ 45 K. Below ≈ 20 K the specific dispersion of dielectric response indicates a transition into proton glass (PG) state. It was found that the average time of dielectric relaxation follows the empirical Vogel—Fulcher law. Obtained results speak in favor of the coexistence of AFE and PG phases at low temperatures.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.