Abstract
The excitonic luminescence spectra of semi-insulating GaAs crystals with various concentrations of shallow acceptors (C) and donors (Si) were measured at 4.2 K. An analysis of these spectra made it possible to determine the coefficients of capture of free excitons by shallow neutral acceptors $$[b_{A^0 X} = (4 \pm 2) \times 10^{ - 8} cm^3 /s]$$ and donors $$[b_{D^0 X} = (1.5 \pm 0.8) \times 10^{ - 7} cm^3 /s]$$ at liquid-helium temperature and also to estimate the coefficient of capture of free excitons by shallow ionized donors $$(b_{D^ + X} \gg b_{D^0 X} )$$ .
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