Abstract

In the nanometer technology node, the contradiction between high investment and low yield has got more and more prominent, so it plays a very significant role in improving the yield to optimize layout. The COE, Critical area On Edge network, which is a kind of network based on the redundancy material defect with edges expressing critical areas, is constructed in this paper. Vertexes stand for nets of the layout, and edges do short circuit areas existing in nets. By studying the applications of COE in DFM, it is indicated that the COE provides a new way to the research of nanometer node in DFM.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.