Abstract

Co-dot-array formation is investigated along scratches on n-Si(111) surface in the aqueous solution of NH 4F and CoSO 4·7H 2O. It was found that removal of oxygen from the solution by Ar-sparge on the surface of aqueous solution is effective for the formation of Co-dot-array. Some increase in the concentration of NH 4F in the solution also tended to form the dot-array. The condition on the scratch for the formation of Co-dot-array is still left to be investigated.

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