Abstract

Error-correcting codes for permutations have received considerable attention in the past few years, especially in applications of the rank modulation scheme for flash memories. While codes over several metrics have been studied, such as the Kendall $\tau $ , Ulam, and Hamming distances, no recent research has been carried out for erasures and deletions over permutations. In rank modulation, flash memory cells represent a permutation, which is induced by their relative charge levels. We explore problems that arise when some of the cells are either erased or deleted. In each case, we study how these erasures and deletions affect the information carried by the remaining cells. In particular, we study models that are symbol-invariant, where unaffected elements do not change their corresponding values from those in the original permutation, or permutation-invariant, where the remaining symbols are modified to form a new permutation with fewer elements. Our main approach in tackling these problems is to build upon the existing works of error-correcting codes and leverage them in order to construct codes in each model of deletions and erasures. The codes we develop are in certain cases asymptotically optimal, while in other cases, such as for codes in the Ulam distance, improve upon the state of the art results.

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