Abstract
The addition of small amounts of copper to aluminum metallurgy significantly increases the electromigration resistance of aluminum stripes. A reproducible technique for co-evaporating these and other binary and ternary alloy films has been developed using a theoretical model as a guide to its design. The technique, which utilizes up to three evaporation sources, is extremely versatile. Films of controlled and predictable composition are routinely generated facilitating study and optimization of the alloy film properties. The effect of various concentrations of copper on stripe lifetime and resistivity is presented. Also, the effect of small amounts of silicon added to Al-Cu lands in contact with silicon devices to retard junction penetration is discussed. Analysis data on Al-Cu and Al-Cu-Si films are given.
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