Cobalt (II) β-diketonate adducts as new precursors for the growth of cobalt oxide films by liquid injection MOCVD

Abstract

New metalorganic compounds—adducts of cobalt(II) acetylacetonate (acac) and cobalt(II) 2,2,6,6-tetramethyl-3,5-heptanedionate (thd) with N,N,N′,N′-tetramethyl-1,2-diaminoethane have been synthesized and studied as potential precursors for liquid injection metalorganic chemical vapor deposition of Co 3O 4 films. The properties of the films were compared with those deposited using standard [Co(acac) 2] 4 and Co(thd) 2 precursors. Depositions were carried out at 350–600°C on LaAlO 3 (1 0 0), sapphire (R-plane), MgO (1 0 0) and Si (1 0 0) substrates. The films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy. Depending on substrate material, highly (1 1 0) or (1 0 0) textured Co 3O 4 films have been deposited; moreover, films exhibited preferential in-plane orientation. No significant difference has been found in the quality of Co 3O 4 films deposited from different precursors.