Abstract
Coaxial ZnSe/Si nanocables were successfully produced by a simple two-step growthmethod. ZnSe nanowire cores were first synthesized by thermal evaporation and thenfollowed by the chemical vapor deposition (CVD) growth of Si shells. The former have acubic single-crystal structure with a longitudinal direction of , while the latter are polycrystalline and composed of a large number of Si crystal grainswith dominantly (111) surfaces. Controlled p-type doping to the Si shells was implementedby B diffusion after the shell growth. Electrical measurements on the Si shellsdemonstrated that the shell conductivity could be tuned in a wide range of eightorders of magnitude by adjusting the B concentration, and a hole mobility of11.7 cm2 V − 1 s − 1 and a holeconcentration of 2 × 1015 cm − 3 were revealed for the modestly doped Si shells. The ZnSe/Si core/shell nanocables havegreat potential in nano-optoelectronic applications.
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