Abstract
The optimum conditions for mullite coating on SiC-gradient carbon substrates and its oxidation resistance were studied. A homogeneous precursor solution with the composition of Al/Si=3 was prepared by refluxing an ethanol solution of Al(NO3)3 and silicon ethoxide (TEOS) of 0.1mol/l at its boiling point for 12h. A mullite film with a thickness of 1.0μm without any cracks was obtained under the following conditions; the drawing up the substrate from the precursor solution at a rate of 0.05cm/s, keeping at room temperature for 24h and at 100°C for 48h in air, and then heating up to 1300°C at a rate of 200°C/h. The SiC-gradient carbon substrates coated with the mullite film showed the excellent oxidation resistance; no appreciable weight loss by oxidation at 1000°C for 15h was observed.
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