Abstract
Bismuth oxychloride (BiOCl), limited by a wide band gap, makes it poor perform in visible-light-driven photodegradation. The novel semiconductor composites of BiOCl/g-C3N4@UiO-66 composites were first prepared through the facile solvothermal approach. BiOCl/g-C3N4@UiO-66 photocatalysts were characterized and BiOCl nanoplates and g-C3N4 nanosheets were successful constructed and further decorated on the surface with UiO-66. In comparison with the binary composites and the pure materials, BiOCl/g-C3N4@UiO-66 exhibits the higher RhB photocatalytic degradation under visible light irradiation. The enhanced photocatalytic activity of BiOCl/g-C3N4@UiO-66 composites can be attributed to the lower recombination probability of electron-hole pair of the heterojunction, increased surface area for RhB adsorption accomplished with photodegradation process.
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