Abstract
ABSTRACTCoarsening phenomenon is observed among crystalline Si clusters which are deposited over silicon-oxide and -nitride surfaces by chemical vapor deposition using HC1 as an etching gas. As soon as the deposition starts, submicron-sized fine clusters nucleate and increase in number, but do not grow in size. Micron-sized large clusters emerge among the fine ones, gradually increase and rapidly grow, while the preexisting fine ones disappear finally. It is found that the fine clusters must be etched away into vapor again by HCl or reevaporated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
