Coarsening of ion-beam-induced surface ripple in Si: Nonlinear effect vs. geometrical shadowing

Abstract

The temporal evolution of a periodic ripple pattern on a silicon surface undergoing erosion by 30 keV argon ion bombardment has been studied for two angles of ion incidence of 60 deg. and 70 deg. using ex situ atomic force microscopy (AFM) in ambient condition. The roughness amplitude (w) grows exponentially with sputtering time for both the angle of ion incidence followed by a slow growth process that saturates eventually with almost constant amplitude. Within the exponential growth regime of amplitude, however, ripple wavelength (l) remains constant initially and increases subsequently as a power law fashion l{proportional_to}t{sup n}, where n=0.47{+-}0.02 for a 60 deg. angle of ion incidence followed by a saturation. Wavelength coarsening was also observed for 70 deg. but ordering in the periodic ripple pattern is destroyed quickly for 70 deg. as compared to 60 deg. . The ripple orientation, average ripple wavelength at the initial stage of ripple evolution, and the exponential growth of ripple amplitude can be described by a linear continuum model. While the wavelength coarsening could possibly be explained in the light of recent hydrodynamic model based continuum theory, the subsequent saturation of wavelength and amplitude was attributed to the effect of geometrical shadowing. more » This is an experimental result that probably gives a hint about the upper limit of the energy of ion beam rippling for applying the recently developed type of nonlinear continuum model. « less