Abstract
The effects of extended Co60 γ radiation upon the electrical resistivity, Hall coefficient, and magneto-resistance of Bi2Te3 have been examined. Co60 γ radiation causes an increase in the Hall coefficient in n-type Bi2Te3 and a decrease in p type. For γ-ray exposures in the range of 1018 photons cm−2, the apparent carrier removal rate is ∼10−1 carriers per Co60 photon. Thermal annealing of radiation-induced damage was also investigated. The results may be most consistently analyzed in terms of a model which consists of radiation-induced tellurium vacancies and interlaminar clusters of Te interstitials. The effects of the radiation-induced point defects are discussed. Evidence of an effect on impurity band conduction at low temperatures in n-type Bi2Te3 is observed.
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