Abstract
Tin dioxide films are of interest as transparent conducting deposits. Well-developed are the methods of chemical vapour deposition of tin dioxode films in a continous reactor [1]. The conventional tin sources are tetramethyl tin, tetraethyl tin, tin dibutyldiacetate and tin acetylacetonate. Oxygen is most often used as an oxider. On deposition of tin dioxide in the tetramethyl tin-argon-oxygen system [2] the deposition rate was 5–40 nm/min. The resistivity of the films obtained was 10-2–10-3 Ω cm. The conductivity of the precipitates was increased by antimony and fluorine doping [1]. Tin dioxide deposition from tin dichloromethyl has been reported [3]. A glass plate was heated by a CO2-laser with a power of 50 W. Films with a surface resistivity of no more than 200Ω/Square and 90% transmission have been obtained.
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