Abstract
Using picosecond CO2 laser pulses, the following sequence of events was identified in high power laser-semiconductor interaction: (i) generation of a dense (≳1018 cm3) plasma, (ii) melting of the crystal by free-carrier absorption, (iii) formation of surface ripples at the breakdown threshold, and (iv) formation of a crater at higher intensities. The melting without breakdown region can be quite broad and may have potential applications in semiconductor processing and annealing.
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