Abstract

A method for treating the surface of crystalline silicon (α-Si) covered with a fused silica (SiO2) plate by a laser-induced plume arising from the absorption of CO2 laser radiation in glass is presented. The mechanism of micro-plume formation and the effect of this micro-plume on α-Si sample are considered. The α-Si processing regimes were determined that relate the depth of the formed relief to the radiation power density, the temperature of the micro-plume formed during SiO2 irradiation was measured and reached 3000 K. The diffraction phase gratings were designed, manufactured on silicon, and tested, they successfully split 10.6 μm laser beam at 0 and ± 1 diffraction orders. The method belongs to the group of direct writing methods and is easily adapted to different types of diffraction elements on the surface of Si and other materials transparent to 10 μm irradiation.

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