Abstract
The effect of co-sputtering condition on the structural properties of <TEX>$Mg_xZn_{1-x}O$</TEX> thin films grown by RF magnetron co-sputtering system was investigated for manufacturing UV LED. <TEX>$Mg_xZn_{1-x}O$</TEX> thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The <TEX>$Mg_xZn_{1-x}O$</TEX> thin films have sufficient crystallinity on the high ZnO power. The EDS analyzed showed that the Mg content in the <TEX>$Mg_xZn_{1-x}O$</TEX> films decreased from 3.99 to 24.27 at.% as the RF power of ZnO target increased. The Mg content in the <TEX>$Mg_xZn_{1-x}O$</TEX> films could be controlled by co-sputtering power.
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