Abstract
Zinc magnesium oxide, Zn1−xMgxO, is a desirable candidate for a buffer/window layer in thin film solar cells. We deposited Zn1−xMgxO film with hexagonal structure by co-sputtering of ZnO and Mg targets. Band gap of the Zn1−xMgxO films was found to increase from 3.48 to 3.83 eV with the increase in Mg content in the film. We used X-ray photo-electron spectroscopy (XPS) to examine the interfaces formed between such Zn1−xMgxO films and the recently reported cubic structured SnS (SnS-CUB) thin films of bandgap 1.72 eV. The valence band maxima of the materials determined from XPS show that the conduction band offset (CBO) for Zn0.88Mg0.12O/SnS-CUB interface is 0.39 eV. The CBO, 0.52 eV of Zn0.88Mg0.12O/SnS-CUB hetero junction was also calculated from electron affinities of Zn0.88Mg0.12O and SnS-CUB thin films which is in agreement with the CBO calculated from the XPS measurements.
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