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Abstract
Ti, Pt, Ni, and Co salicide processes are applied to 0.1-µm CMOS devices and the problems and possibilities are discussed. Co salicide technology is an especially promising process. The mechanisms of the resistance fluctuations and junction leakage current appearing in the conventional Co salicide processes are identified and solution methods are presented. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(11): 26–33, 1998
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