Abstract
We investigate properties of magnetic tunnel junctions (MTJs) having a Co/Pt multilayer as a recording layer. A CoFeB layer is inserted between MgO barrier and the recording layer in order to enhance the tunnel magnetoresistance ratio. We show that an additional layer of Ta inserted between CoFeB and Co/Pt multilayer is effective in improving the MTJ properties after annealing. A high effective magnetic anisotropy energy per unit area over 1.2 mJ/m2 is obtained after annealing at 300 °C. Using a 1.6 nm-thick CoFeB insertion layer, both high thermal stability factor of 92 and high tunnel magnetoresistance ratio of 91% are achieved in a MTJ with 17 nm in diameter.
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