Abstract
A novel red-emitting K2SiF6:Mn4+ phosphors with different Mn4+ doping mole fraction were synthesized by co-precipitation method. X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FT-IR) and fluorescence spectrometer were used to characterize the properties of K2SiF6:Mn4+ phosphors. As-prepared K2SiF6:Mn4+ phosphors have cubic crystal structure. Under excitation at 450 nm, an intense red emission peak around 632 nm corresponding to the 2Eg-4A2 transition of Mn4+ was observed for 8.37 mol% K2SiF6:Mn4+ phosphors and was used as the optimum doping concentration. The excellent luminescent properties make the phosphor K2SiF6:Mn4+ a candidate for applications in InGaN-YAG:Ce3+ type LEDs for high color rendering. “A warm” white light LED with an efficiency of 147 lm/w and a color rendering index of 87.4 at a color temperature of 2864K has been obtained by fabricating YAG:Ce3+ with K2SiF6:Mn4+ on an InGaN chip.
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