Abstract
Abstract Etching of magnetic thin films has been studied using CO/NH 3 plasma with an electron cyclotron resonance plasma source and DC sample bias. Etch rates were proportional to bias power density. The maximum etch rate was 127 nm/min. Both the pressure dependence of Ni–Fe etch rate and the results of appearance mass spectroscopy suggested that the chemical reaction induced by energetic CO molecules enhanced the etch rate.
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