Abstract
On n-Si(100) substrates,the Si1-xGex films were deposited by RF magnetron sputtering technique.AES spectra determine that Ge content in the Si1-xGex film is 17% approxi-mately.The Si0.83Ge0.17 films were doped with phosphorus at high temperature through thermal diffusion to fabricate n-type polycrystalline films,that is,the n-poly-Si0.83Ge0.17.And a Co film was sputtered on it.Thus,the Co/n-poly-Si0.83Ge0.17/n-Si Schottky junctions were made.Rapid thermal annealing(RTA) was conducted on these junctions from 300 ℃ to 600 ℃.The variable temperature I-V testing has been performed on the annealed Co/n-poly-Si0.83Ge0.17 Schottky junctions.It is found that,with the test temperature increase,the Schottky barrier height(SBH) difference of samples annealed at different RTA temperatures becomes less.And the sample annealed at 500 ℃ has the least apparent SBH.As a whole,the SBHs increase and the apparent ideality factors decrease with the test temperature increasing.Based on the model of inhomogeneous distribution of SBH,a reasonable explanation has been fulfilled on the experimental data.
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