Co-integration of GaAs MESFET and Si CMOS circuits

Abstract

Co-integration of GaAs MESFET and Si CMOS circuits is demonstrated using GaAs-on-Si epitaxial growth on prefabricated Si wafers. This is thought to be the first report of circuit-level integration of the two types of devices in a coplanar structure. A 2- mu m gate Si CMOS ring oscillator has shown a minimum delay of 570 ps/gate, whereas on the same wafer a 1- mu m gate GaAs MESFET buffered-FET-logic (BFL) ring oscillator has a minimum delay of only 70 ps/gate. A composite ring oscillator consisting of Si CMOS invertors and GaAs MESFET invertors connected in a ring has been successfully fabricated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>