Abstract
In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.
Highlights
The volume of data exchanged across the world increases at a never-ending pace
We report on the co-integration of a tunable hybrid III-V/silicon laser emitting in the 1.3μm range and a silicon modulator, forming an integrated transmitter operating at a modulation rate up to 25Gb/s
Where ωm is the frequency of the driving signal, ω0 is the lowest output frequency of the generator, CJ is the capacitance of the p-n junction, Zsi is the series resistance, and Vavg is the average voltage between the signal and ground electrodes experienced by a photon as it travels the modulator
Summary
The volume of data exchanged across the world increases at a never-ending pace. The rib is narrowed down to 0.6μm below the III-V active region to ensure maximum light confinement in the MQW, but its width increases up to 1.55μm at both ends of the III-V mesa in order to couple light into the silicon waveguide, as shown on Fig. 1(c). This transition is realized over 100μm, using specific mode transformers in the silicon layer designed using the adiabaticity criterion [30]. This parameter is the most critical one, since for a ± 30nm variation from the targeted 100nm gap, the efficiency will fall under 70%
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
