Co-Electrodeposition of Metallic Precursors for the Fabrication of CZTSe Thin Films Solar Cells on Flexible Mo Foil

M I Khalil,L Pedrazzetti,S Binetti,A Le Donne,L Magagnin,A Lucotti,R Bernasconi

doi:10.1149/2.1001706jes

M I Khalil, L Pedrazzetti + Show 5 more

Open Access

https://doi.org/10.1149/2.1001706jes

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Abstract

Earth abundant Cu2ZnSnSe4 (CZTSe) thin films solar cells were fabricated on flexible molybdenum (Mo) foil substrate through an electrochemical approach. After co-electroplating from single electrolyte, Cu-Zn-Sn (CZT) precursor was selenized in quartz tube furnace at 550°C for 15 minutes in Ar atmosphere with the presence of elemental selenium in order to form CZTSe compound. Before selenization, CZT precursor was soft-annealed at 310°C for 150 minutes in Ar atmosphere in order to improve intermixing of the elements and to reduce roughness. The formation of Kesterite CZTSe on selenized film was confirmed by X-ray diffraction (XRD) and Raman spectroscopy. SEM imaging and EDS line profile on the cross-section of CZTSe layer showed the well-formed CZTSe along depth of the film also. Opto-electrical characteristics of the film by photoluminescence spectroscopy confirmed the suitability of the absorber layer to make solar cell. A flexible solar cell with Al/Al-ZnO/i-ZnO/CdS/CZTSe/Mo-foil configuration, which showed 0.1% power conversion efficiency at first attempt, has been fabricated, in which buffer layer CdS has been deposited through chemical bath deposition and transparent conducting oxides (i-ZnO, Al-ZnO) have been deposited by DC pulsed sputtering.

Highlights

D303 solar cells on flexible Mo foil through electrodeposition-annealing route for the first time
Like in our previous work, here Cu-poor, Zn-rich CZT precursor has been used to fabricate CZTSe, as those compositions are ideal for the fabrication of Kesterite based thin films.[14,16,17]
MoSe2 (JCPDS 29-0914) which usually forms at the interface between CZTSe and bottom Mo layer was observed at diffraction angles 31.2◦ and 55.9◦