Abstract
We investigated the layer growth of Co-doped ZnO in relation to Zn-polar homoepitaxy. Remarkable changes in layer growth and crystal quality occurred as a result of doping with Co ions into ZnO. A spontaneous magnetization of Zn0.94Co0.06O layers was correlated closely with the presence of free electrons. The correlation was found in the lower p (O2) regions below 1.4×10–6 mbar which result in the formation of a pitted surface and lead to a deterioration of crystallinity. To prevent the formation of pits, we applied a repeated oxygen pressure-modulated growth to obtain coherent growth for Co-doped ZnO layers with a 2D mode. This specific growth was effective in producing pit-free surface uniformities over large areas that maintained ferromagnetic ordering. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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