Abstract
The co-deposition of deuterium with silicon doped carbon for silicon concentrations between 0–100 at.% in the temperature range from room temperature to 1000 K has been investigated. The eroded material from various different targets was caught on collectors together with the reflected D to build up the co-deposited layers, which were analysed with MeV ion beam techniques. The amount of trapped D per re-deposited target atom depends weakly on the Si concentration. The maximum of about 0.7 D/(Si + C) was found at Si/C ≈ 1. For pure C and pure Si the D concentration is about 0.45 and 0.5 D atoms per re-deposited target atom at room temperature, respectively. For increasing deposition temperature the D concentration does not decrease significantly until about 600 K. At about 1000 K the D concentration for pure carbon layers is still about 30% of the concentration at room temperature. Also, co-deposited layers of stainless steel and of titanium–carbon mixtures were investigated.
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