Abstract

BackgroundBi2Se3 holds significant importance in thermoelectric applications, and Co is considered a promising candidate for use as a barrier layer. This study investigates the interfacial reactions between Co and Bi2Se3, along with the phase equilibria within the Bi-Co-Se system, to provide fundamental insights. MethodsThe Bi-Co-Se alloys and Bi2Se3 substrates were prepared with pure constituent elements. The Co/Bi2Se3 couples were formed by electroplating Co onto the Bi2Se3 substrates, followed by subjecting them to reactions at 400℃ and 500℃. Significant findingsIsothermal sections of the Bi-Co-Se phase equilibria at 400 °C and 500 °C have been proposed based on key ternary experimental results and phase diagrams of its three constituent binary systems. No ternary compounds were observed. The stable phases and phase relationships are similar at both 400℃ and 500℃, except for the instability of Co9Se8 at 500℃. Significant interfacial reactions were observed in the Co/Bi2Se3 couples reacted at 400℃ and 500℃. These results suggest that Co alone may not serve as a suitable barrier layer for Bi2Se3 at temperatures exceeding 400 °C. The reaction path at 400℃ is Co/Co1-ꭓSe/(Bi2)m(Bi2Se3)n/Bi2Se3, with Se as the dominant diffusion species. Se atoms migrate towards Co to form the Co1-ꭓSe phase and leave a Se-depleted Bi2Se3 behind to form (Bi2)m(Bi2Se3)n. Unexpected liquation occurred in the Co/Bi2Se3 couple reacted at 500℃. This liquation resulted from the rapid outward diffusion of Se from the Bi2Se3, leading to the emergence of bismuth from the Se-depleted Bi2Se3 and its transformation into a molten state.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call