Abstract
The authors report changes in MOS-controlled thyristor (MCT) performance caused by irradiation with fast neutrons (E>1 MeV) and with Co-60 gamma rays. The results are significant because the MCT is representative of a growing class of power devices that combine bipolar and field-effect-transistor (FET) technologies and because MCTs are being considered for use in systems that must survive exposure to radiation. The MCTs tested, which were designed to hold off 400 V and carry 50 A, were operable with +or-10-V control voltages after they received a total dose of 1 Mrad(Si), but they could not be turned on after exposure to 1E12 n/cm/sup 2/. This observation is consistent with calculations of the effects of neutron fluence on minority-carrier transport in the MCT. The observed shifts with total dose of V/sub on/ and, at least in part, of V/sub bias/ are consistent with the known behavior of p-channel and n-channel polysilicon gate FETs. >
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