Abstract
Abstract Diphenylsilane-derived high triplet energy host materials were developed by coupling diphenylsilane with CN-modified carbazoles. Two host materials with two CN-modified carbazoles or one CN-modified carbazole were synthesized, and their photophysical and device behavior were investigated. The host materials delivered a high triplet energy over 3.00 eV, a high glass transition temperature over 130 °C, ambipolar charge transport, and high external quantum efficiency over 20% as hosts of deep blue-emitting Ir emitters.
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