Abstract
The LHC machine is planning an upgrade program which will smoothly bring the luminosity to about 7.5×1034cm−2s−1 in 2028, to possibly reach an integrated luminosity of 3000 fb−1 by the end of 2037. This High Luminosity scenario, HL-LHC, will present new challenges in higher data rates and increased radiation. In order to maintain its physics reach the CMS collaboration has undertaken a preparation program of the detector known as Phase-2 upgrade. The CMS Phase-2 Pixel upgrade will require a high bandwidth readout system and high radiation tolerance for sensors and on-detector ASICs. Several technologies for the upgrade sensors are being studied. Serial powering schemes are under consideration to accommodate significant constraints on the system. These prospective designs, as well as new layout geometries that include very forward pixel discs, will be presented together with performance estimation.
Highlights
The LHC machine is planning an upgrade program which will smoothly bring the luminosity to about 7.5×1034cm−2s−1 in 2028, to possibly reach an integrated luminosity of 3000 fb−1 by the end of 2037
Serial powering schemes are under consideration to accommodate significant constraints on the system
Thickness of the active area in the range 100-200 μm. This is supported by results on mini-strip sensors [9, 10] which indicate that after a NIEL typical of HL-LHC at r ∼ 4 cm, e.g. about 10161 MeV neq/cm2, the 100 μm thick sensors are as efficient in collecting charge as the 200 μm thick ones but operating at 200 V smaller bias voltage
Summary
The baseline is to instrument the Inner Pixel with small pitch radiation tolerant planar silicon sensors with the option of using 3D sensors in the regions of the detector more exposed to irradiation. Thickness of the active area in the range 100-200 μm This is supported by results on mini-strip sensors [9, 10] which indicate that after a NIEL typical of HL-LHC at r ∼ 4 cm, e.g. about 10161 MeV neq/cm, the 100 μm thick sensors are as efficient in collecting charge as the 200 μm thick ones but operating at 200 V smaller bias voltage. Square pixels show a deterioration of the resolution in the scenario of large thickness and high threshold This is likely due to the breakage of the cluster occurring more frequently when a long path through the silicon is sampled many times by shorter cells. Goals of the submission effect of over-metal on high bias voltage stability common p-stop vs p-spray isolation spatial resolution of small pitch pixels (square, rectangular, “bricked” geometry). Sintef n-on-n active thickness: 300 μm slim edge (active area 210 μm from dicing edge) slim pixels (25×600 μm2)
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