Abstract
AbstractThis work shows that the addition of dielectric levels in interconnect stacks increases significantly the CMP-induced peeling. The fracture energies, measured by 4-point bending technique, are less sensitive to the level number increase, even if they are slightly degraded. This leads to the conclusion that delamination during polishing depends highly on the stack elastic properties and there is no simple correlation between stack adhesion and peeling during CMP. In this work, mechanical damages generated during CMP in the dielectric stack before peeling were also investigated. It was shown that, if no peeling appears, CMP have no effect on stack reliability. This indicates that negligible “fatigue” effect takes place during CMP.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
