Abstract
For better gap fill in beyond 56nm pitch Cu interconnect structures, Ru liner is one of the most promising solutions with better coverage and wettability. In this paper several new challenges in Ru CMP specific to ≤ 48nm pitch structures (also called 10nm technology) are presented. New CMP solutions were developed by optimizing the slurry, consumables, and process sequence to address the observed challenges such as Ru bending and Cu recess. The optimized solutions to address these challenges were further tested on integrated wafers and improvements in resistance and yield were demonstrated through electrical tests.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
