Abstract
This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 μm (length) × 0.2 μm (100 nm width + 100 nm gap) = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.
Highlights
Mechanical switches have emerged as a solution to the increasing static power consumption that metal-oxide-seminconductor field effect (MOSFET) transistors present as their dimensions are reduced [1,2,3]
This problem is solved by the ideally zero leakage power in the OFF state that microelectromechanical (MEMS) switches have, thanks to the air gap defined between the mechanical structure and driver
Mechanical switches break some of the limits that switches based on transistors present as subthreshold swing (0.1 mV/decade [4,5]) and ION /IOFF ratio (1011 [4])
Summary
Mechanical switches have emerged as a solution to the increasing static power consumption that metal-oxide-seminconductor field effect (MOSFET) transistors present as their dimensions are reduced [1,2,3]. This problem is solved by the ideally zero leakage power in the OFF state that microelectromechanical (MEMS) switches have, thanks to the air gap defined between the mechanical structure and driver. Mechanical switches break some of the limits that switches based on transistors present as subthreshold swing (0.1 mV/decade [4,5]) and ION /IOFF ratio (1011 [4]) As their dimensions are reduced faster time response (nano seconds regime [6,7]) are obtained and its integration density is increased. There are several challenges that need to be overcome for a large scale production [9]: lower operating voltages, better reliability, stable contact resistance value, reduction of the adhesive forces and miniaturization to the nanoscale following an easy and reproducible fabrication process
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