Abstract
A CMOS process for field emission devices based on {111} silicon surfaces is presented. Structure sizes below 300nm are produced with i-line lithography and sizes below 100nm with an additional epitaxial layer. Ridges with apex diameters of 40nm are formed by line shaped shadow masks with molecular beam epitaxy. The resulting structures are used as field emission devices. Electrical measurements show a distinct linear region in Fowler-Nordheim coordinates. However, immediate destruction of these devices is observed within only a few voltage sweeps. A clear lifetime improvement is obtained by reducing the distance between anode and cathode, indicating big influence of residual gas breakdown.
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