CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals

Abstract

Aluminum nitride (AlN) films have attractive physical properties, such as wide bandgap (6.2 eV), high thermal conductivity (320 W/mK), and good match of both thermal expansion coefficient and lattice constant to those of Si substrate . Based on these properties, AlN films can be applied in surface acoustic wave (SAW) devices, memories devices, and optoelectronic devices. It has been reported in our recent studies that amorphous AlN thin films containing aluminum nanocrystals (nc-Al) deposited on Si substrate by radio-frequency (rf) magnetron sputtering possess memory effect and exhibit interesting current conduction behaviors.