Abstract
We present a highly efficient polarization splitter and rotator (PSR), fabricated using 248 nm deep ultraviolet lithography on a silicon-on-insulator substrate. The PSR is based on a double-etched directional coupler with a length of 27 µm. The fabricated PSR yields a TM-to-TE conversion loss better than 0.5 dB and TE insertion loss better than 0.3 dB, with an ultra-low crosstalk (-20 dB) in the wavelength regime 1540-1570 nm.
Highlights
Silicon photonics built on a silicon-on-insulator (SOI) platform has received much attention in recent years due to its compatibility with complementary metal-oxide-semiconductor (CMOS) technology, which makes the mass production of photonics devices cost-effective [1,2]
We present a highly efficient polarization splitter and rotator (PSR), fabricated using 248 nm deep ultraviolet lithography on a silicon-on-insulator substrate
The PSR is based on a double-etched directional coupler with a length of 27 μm
Summary
Silicon photonics built on a silicon-on-insulator (SOI) platform has received much attention in recent years due to its compatibility with complementary metal-oxide-semiconductor (CMOS) technology, which makes the mass production of photonics devices cost-effective [1,2]. The intrinsic high-index contrast property of SOI allows for photonics with very small footprint [3,4], which is highly desirable for system integration This property results in high polarization dependence for silicon photonic devices. PSRs based on symmetrical directional couplers have been successfully demonstrated [8,12,13] These demonstrations are either simulation work or experimental demonstrations based on electron beam lithography (EBL) with air as top cladding. This lack of cladding breaks the mirror symmetric of an un-etched waveguide, making a polarization rotator easier to construct. A 0.3 dB TE-to-TE insertion loss and a 0.5 dB TM-to-TE conversion loss over a bandwidth of 30 nm are measured
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