Abstract
This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.
Highlights
CMOS technology is one of the most prevailing technologies used for the implementation of radio frequency integrated circuits (RFICs) due to its reduced cost and its compatibility with silicon-based system on chip [1]
The proposed ultra-wideband low noise amplifier (UWB LNA) (LNA1 and LNA2) circuits are designed in TSMC CMOS 0.18 μm technology process using Agilent Advanced Design System (ADS)
Electromagnetic simulation is verified by the post-layout simulation results which are obtained using the Cadence design environment
Summary
CMOS technology is one of the most prevailing technologies used for the implementation of radio frequency integrated circuits (RFICs) due to its reduced cost and its compatibility with silicon-based system on chip [1]. LNA has many desired design specifications such as low and flat noise figure, high and flat power gain, good input and output wide impedance matching, high reverse isolation, and reduced DC power consumption [1, 3]. Nowadays one of the most suitable configurations suggested for LNA implementation is current reuse cascaded amplifier. This LNA configuration can attain low DC power consumption, high flattened gain, minimized NF, and excellent reverse isolation while achieving wide input and output impedance matching [1,2,3]. A symmetric 3D structure is proposed as a new structure of integrated inductors for RFICs. This paper discusses the design procedure of current reuse cascaded UWB LNA and its bandwidth expansion.
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